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Same model may have multiple batches, images only for reference.
IRF7601TRPBF
Same model may have multiple batches, images only for reference.

IRF7601TRPBF

Part No IRF7601TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 5.7A MICRO8
Datasheet
IRF7601TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 22nC @ 4.5V
Max Input Capacitance 650pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 35 mOhm @ 3.8A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Micro8
Dimension 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Win Source Part Number 001905-IRF7601TRPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF7601TRPBF CAD Model

Description

The Infineon Technologies IRF7601TRPBF is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 5.7A @ 25°C
  • Gate-Source Threshold Voltage: 700mV @ 250μA
  • Maximum Gate Charge: 22nC @ 4.5V
  • Maximum Input Capacitance: 650pF @ 15V
  • Maximum Rds On at Id,Vgs: 35 mOhm @ 3.8A, 4.5V
  • Package: Micro8 package
  • Power Dissipation: 1.8W (Ta)
  • Status: Active part

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Quantity Unit Price Ext. Price
205+ $0.2845 $58.3225
495+ $0.2335 $115.5825
770+ $0.2261 $174.0970
1,060+ $0.2189 $232.0340
1,365+ $0.2116 $288.8340
1,830+ $0.1897 $347.1510
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