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Same model may have multiple batches, images only for reference.
IRF7663 Real Image
Same model may have multiple batches, images only for reference.

IRF7663

Part No IRF7663
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Power MOSFET(Vdss=-20V, Rds(on)=0.020ohm) | MOSFET P-CH 20V 8.2A MICRO8
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 20V
Id - Continuous Drain Current 8.2A
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Maximum) at Id, Vgs 20mOhm at 7A, 4.5V
Gate Source Voltage(th) (Maximum) at Id 1.2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 45nC at 5V
Gate Source Voltage (Maximum) ±12V
Input Capacitance (Ciss) (Maximum) at Vds 2520pF at 10V
Power Dissipation (Maximum) 1.8W
Mounting Style SMD
Supplier Device Package Micro8
Manufacturer Package 8-TSSOP, 8-MSOP
Manufacturer Pack Quantity 80
MSL Level 1 (Unlimited)
Win Source Part Number 1187338-IRF7663
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF7663 CAD Model

Description

The Infineon Technologies IRF7663 is a P-Channel MOSFET transistor that is designed for use in high-power applications.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 8.2A
  • On-Resistance: 20mOhm @ 7A and 4.5V gate-source voltage
  • Gate-Source Voltage Threshold: 1.2V @ 250μA
  • Maximum Gate-Source Voltage: ±12V
  • RoHS compliant: Yes
  • Package: surface-mount package
  • Suitable for: high-power applications

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