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Same model may have multiple batches, images only for reference.
IRF7700GTRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF7700GTRPBF

Part No IRF7700GTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 8.6A 8-TSSOP
Datasheet
IRF7700GTRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 8.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 89nC @ 5V
Max Input Capacitance 4300pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 15 mOhm @ 8.6A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Dimension 8-TSSOP (0.173", 4.40mm Width)
Win Source Part Number 1046686-IRF7700GTRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7700GTRPBF CAD Model

Description

The Infineon Technologies 1046686-IRF7700GTRPBF is a P-Channel MOSFET with a Drain-Source Breakdown Voltage of 20V and Continuous Drain Current at 25°C of 8.6A (Ta).

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current at 25°C: 8.6A (Ta)
  • Maximum Power Dissipation: 1.5W (Ta)
  • Maximum Rds On at Id,Vgs: 15 mOhm @ 8.6A, 4.5V
  • Drive Voltage: 2.5V, 4.5V
  • Mounting Type: SMD (SMT)
  • Technology: MOSFET
  • Package: 8-TSSOP
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Gate Charge: 89nC @ 5V
  • Category: Discrete Semiconductor Products
  • Product Status: Obsolete(EOL)
  • Ideal For: Applications that require high voltage and high current

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