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Same model may have multiple batches, images only for reference.
IRF7751TR Real Image
Same model may have multiple batches, images only for reference.

IRF7751TR

Part No IRF7751TR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 30V 4.5A 8-TSSOP
Datasheet
IRF7751TR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.5A
Maximum Rds On at Id,Vgs 35 mOhm @ 4.5A, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 44nC @ 10V
Max Input Capacitance 1464pF @ 25V
Maximum Power Dissipation 1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Win Source Part Number 001925-IRF7751TR
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF7751TR CAD Model

Description

The Infineon Technologies IRF7751TR is a dual P-channel FET with a logic level gate feature.

  • Package: 8-TSSOP
  • Temperature Range: -55°C to 150°C
  • Maximum Power Dissipation: 1W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 4.5A @ 25°C
  • Maximum Rds On at Id,Vgs: 35 mOhm @ 4.5A, 10V
  • Gate-Source Threshold Voltage: 2.5V @ 250μA

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.1769 $58.8450
120+ $0.9656 $115.8720
190+ $0.9356 $177.7640
260+ $0.9055 $235.4300
330+ $0.8755 $288.9150
445+ $0.7854 $349.5030
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