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Same model may have multiple batches, images only for reference.
IRF7752 Real Image
Same model may have multiple batches, images only for reference.

IRF7752

Part No IRF7752
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 4.6A 8-TSSOP
Datasheet
IRF7752 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.6A
Maximum Rds On at Id,Vgs 30 mOhm @ 4.6A, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 9nC @ 4.5V
Max Input Capacitance 861pF @ 25V
Maximum Power Dissipation 1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Win Source Part Number 001927-IRF7752
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF7752 CAD Model

Description

The 001927-IRF7752 is a dual N-channel FET transistor manufactured by Infineon Technologies.

  • Logic Level Gate: Yes
  • Maximum Power Dissipation: 1W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 4.6A @ 25°C
  • Maximum Rds On at Id,Vgs: 30 mOhm @ 4.6A, 10V
  • Package: 8-TSSOP

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6722 $60.4980
210+ $0.5521 $115.9410
325+ $0.5348 $173.8100
450+ $0.5174 $232.8300
580+ $0.5001 $290.0580
775+ $0.4481 $347.2775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,300 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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