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Same model may have multiple batches, images only for reference.
IRF7752GTRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF7752GTRPBF

Part No IRF7752GTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 4.6A 8TSSOP
Datasheet
IRF7752GTRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.6A
Maximum Rds On at Id,Vgs 30 mOhm @ 4.6A, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 9nC @ 4.5V
Max Input Capacitance 861pF @ 25V
Maximum Power Dissipation 1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Win Source Part Number 001928-IRF7752GTRPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF7752GTRPBF CAD Model

Description

The Infineon Technologies 001928-IRF7752GTRPBF is a dual N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 4.6A @ 25°C
  • Maximum Rds on at Id,Vgs: 30mOhm @ 4.6A, 10V
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 9nC @ 4.5V
  • Maximum Input Capacitance: 861pF @ 25V
  • Maximum Power Dissipation: 1W
  • Package: 8-TSSOP
  • Mounting: SMD (SMT)

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