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Same model may have multiple batches, images only for reference.
IRF7756 Real Image
Same model may have multiple batches, images only for reference.

IRF7756

Part No IRF7756
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 12V 4.3A 8-TSSOP
Datasheet
IRF7756 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 4.3A
Maximum Rds On at Id,Vgs 40 mOhm @ 4.3A, 4.5V
Gate-Source Threshold Voltage 900mV @ 250μA
Max Gate Charge 18nC @ 4.5V
Max Input Capacitance 1400pF @ 10V
Maximum Power Dissipation 1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Win Source Part Number 1046713-IRF7756
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7756 CAD Model

Description

The Infineon Technologies 456556 is a 2 P-Channel (Dual) FET with a drain-source breakdown voltage of 12V and a continuous drain current of 4.3A.

  • Gate Type: Logic Level
  • Power Dissipation: 1W
  • Gate-Source Threshold Voltage: 900mV @ 250μA
  • Maximum Gate Charge: 18nC @ 4.5V
  • Maximum Input Capacitance: 1400pF @ 10V
  • Maximum Rds On @ Id,Vgs: 40 mOhm @ 4.3A and 4.5V
  • Package: 8-TSSOP
  • Status: Obsolete

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63+ $1.8576 $117.0288
97+ $1.7996 $174.5612
133+ $1.7415 $231.6195
172+ $1.6835 $289.5620
230+ $1.5094 $347.1620
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Availability: 6,970 pieces
MOQ: 26 pcs
Order Increment : 1 pcs
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