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IRF7759L2TRPBF

Part No IRF7759L2TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 75V 160A 15-Pin Direct-FET L8 T/R / MOSFET N-CH 75V DIRECTFET L8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 26A (Ta), 375A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 300nC @ 10V
Max Input Capacitance 12222pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.3W (Ta), 125W (Tc)
Maximum Rds On at Id,Vgs 2.3 mOhm @ 96A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET L8
Dimension DirectFET Isometric L8
Win Source Part Number 1046718-IRF7759L2TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRF7759L2
Introduction Date November 16, 2009
ECCN EAR99
Country of Origin Mexico
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRF7759L2TRPBF CAD Model

Description

The Infineon Technologies IRF7759L2TRPBF is an N-channel MOSFET with a maximum power dissipation of 3.3W (Ta) and 125W (Tc).

  • Power Dissipation: 3.3W (Ta) and 125W (Tc)
  • Mounting Type: Surface-Mount Device
  • Package: DirectFET Isometric L8
  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 26A (Ta) and 375A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Gate Charge: 300nC @ 10V
  • Lifecycle Status: Active
  • Popularity: High

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $8.7970 $52.7820
14+ $7.2181 $101.0534
22+ $6.9925 $153.8350
30+ $6.7670 $203.0100
39+ $6.5414 $255.1146
52+ $5.8647 $304.9644
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,310 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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