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IRF7769L2TRPBF

Part No IRF7769L2TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 375A DIRECTFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 375A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.5mOhm @ 74A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 300 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11560 pF @ 25 V
Power Dissipation (Max) 3.3W (Ta), 125W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DirectFET™ Isometric L8
Package / Case DirectFET™ Isometric L8
Standard Package 4,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 851170-IRF7769L2TRPBF
Ultra Librarian 3D Model Ultra Librarian IRF7769L2TRPBF CAD Model

Description

The 851170-IRF7769L2TRPBF is a N-Channel MOSFET transistor from Infineon Technologies.

  • FET Type: MOSFET N-Channel
  • Technology: HEXFET
  • Vdss (Drain to Source Voltage): 100V
  • Id (Current - Continuous Drain): 375A
  • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 74A, 10V
  • Qg (Gate Charge) @ Vgs: 300 nC @ 10V
  • Ciss (Input Capacitance) @ Vds: 11560 pF @ 25V
  • Operating Temperature: -55°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: DirectFET™ Isometric L8

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $3.5857 $50.1998
34+ $2.9422 $100.0348
53+ $2.8502 $151.0606
73+ $2.7583 $201.3559
94+ $2.6663 $250.6322
126+ $2.3905 $301.2030
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 313 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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