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IRF7805ZTRPBF

Part No IRF7805ZTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 16A 8-SOIC / Trans MOSFET N-CH 30V 16A 8-Pin SOIC T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.25V @ 250μA
Max Gate Charge 27nC @ 4.5V
Max Input Capacitance 2080pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 6.8 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 001933-IRF7805ZTRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRF7805Z
Introduction Date June 26, 2003
ECCN EAR99
Country of Origin China
Halogen Free Not Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRF7805ZTRPBF CAD Model

Description

The Infineon Technologies IRF7805ZTRPBF MOSFET is an N-channel field-effect transistor with a maximum power dissipation of 2.5W (Ta).

  • Continuous Drain Current: 16A (Ta) @ 25°C
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Rds On at Id, Vgs: 6.8 mOhm @ 16A, 10V
  • Gate-Source Threshold Voltage: 2.25V @ 250μA
  • Maximum Gate Charge: 27nC @ 4.5V
  • Maximum Input Capacitance: 2080pF @ 15V
  • Package: 8-SO

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7075 $53.0625
155+ $0.6627 $102.7185
235+ $0.6403 $150.4705
340+ $0.5956 $202.5040
440+ $0.5732 $252.2080
545+ $0.5508 $300.1860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 33,100 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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