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IRF7807APBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRF7807APbf

Part No IRF7807APbf
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8.3A 8SO
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 8.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Rds On (Max) @ Id, Vgs 25mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 5 V
Vgs (Max) ±12V
Power Dissipation (Max) 2.5W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
Standard Package 95 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 160042-IRF7807APbf
Ultra Librarian 3D Model Ultra Librarian IRF7807APbf CAD Model

Description

The HEXFET® IRF7807APbf is a single N-Channel MOSFET designed for various discrete semiconductor applications.

  • Drain-to-Source Voltage: 30V
  • Continuous Drain Current: 8.3A @ 25°C
  • Rds On (maximum): 25mOhm @ 7A and 4.5V
  • Gate Charge: 17nC @ 5V
  • Maximum Gate-Source Voltage: ±12V
  • Power Dissipation: 2.5W
  • Temperature Range: -55°C to 150°C
  • Package: 8-SOIC
  • ECCN: EAR99
  • HTSUS Code: 8541.29.0095

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.7006 $66.5570
230+ $0.5749 $132.2270
350+ $0.5570 $194.9500
480+ $0.5391 $258.7680
625+ $0.5210 $325.6250
835+ $0.4672 $390.1120
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,660 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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