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IRF7807D1PBF

Part No IRF7807D1PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8.3A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 17nC @ 5V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 25 mOhm @ 7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 001936-IRF7807D1PBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 95
Ultra Librarian 3D Model Ultra Librarian IRF7807D1PBF CAD Model

Description

The Infineon Technologies MOSFET, part number IRF7807D1PBF, is an electronic component with a Schottky diode (isolated) feature.

  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 30V
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate-Source Voltage: ±12V
  • Drive Voltage: 4.5V
  • Maximum Rds On: 25 mOhm @ 7A, 4.5V
  • Gate Charge: 17nC @ 5V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package: 8-SO
  • Quantity per Package: 95

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9390 $61.0350
150+ $0.7704 $115.5600
235+ $0.7461 $175.3335
320+ $0.7219 $231.0080
415+ $0.6988 $290.0020
555+ $0.6260 $347.4300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,955 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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Shipping Information

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