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Same model may have multiple batches, images only for reference.
IRF7901D1PBF Real Image
Same model may have multiple batches, images only for reference.

IRF7901D1PBF

Part No IRF7901D1PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description 30V FETKY - MOSFET and Schottky Diode in a SO-8 package
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SOIC
Continuous Drain Current (ID) 6.2 A
Gate to Source Voltage (Vgs) 20 V
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Elements 2
Number of Pins 8
Packaging Tape and Reel
Power Dissipation 2 W
RoHS Compliant
Win Source Part Number 1065525-IRF7901D1PBF
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IRF7901D1PBF CAD Model

Description

The IRF7901D1PBF is a surface-mount N-channel MOSFET manufactured by Infineon Technologies.

  • Channel Type: N-channel
  • Mounting Type: Surface-mount
  • Continuous Drain Current: 6.2A
  • Gate-Source Voltage (Vgs): 20V
  • Package: SOIC
  • Power Dissipation: 2W
  • Maximum Operating Temperature: 150 °C
  • Minimum Operating Temperature: -55 °C
  • Application: Transistors, FETs, MOSFETs - RF

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