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Same model may have multiple batches, images only for reference.
IRF8301MTRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF8301MTRPBF

Part No IRF8301MTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 27A DIRECTFET MT
Datasheet
IRF8301MTRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 34A (Ta), 192A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 150μA
Max Gate Charge 77nC @ 4.5V
Max Input Capacitance 6140pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Maximum Rds On at Id,Vgs 1.5 mOhm @ 32A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET MT
Dimension DirectFET Isometric MT
Win Source Part Number 1046753-IRF8301MTRPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF8301MTRPBF CAD Model

Description

The Infineon Technologies IRF8301MTRPBF is an N-channel MOSFET transistor with a drain-source breakdown voltage of 30V and a continuous drain current of 34A (Ta), 192A (Tc).

  • Type: N-channel MOSFET
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 34A (Ta), 192A (Tc)
  • Power Dissipation: 2.8W (Ta), 89W (Tc)
  • Maximum Rds On: 1.5 mOhm @ 32A, 10V
  • Gate-Source Threshold Voltage: 2.35V @ 150μA
  • Maximum Gate Charge: 77nC @ 4.5V
  • Package: DirectFET MT
  • Category: Discrete Semiconductor Products

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