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IRF8308MTRPBF

Part No IRF8308MTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 27A MX
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 27A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 100μA
Max Gate Charge 42nC @ 4.5V
Max Input Capacitance 4404pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Maximum Rds On at Id,Vgs 2.5 mOhm @ 27A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET MX
Dimension DirectFET Isometric MX
Win Source Part Number 069408-IRF8308MTRPBF
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IRF8308MTRPBF CAD Model

Description

The Infineon Technologies IRL8308MTRPBF is an N-channel MOSFET that features a DirectFET MX case/package.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 27A (Ta) and 150A (Tc)
  • Maximum Gate Charge: 42nC @ 4.5V
  • Maximum Input Capacitance: 4404pF @ 15V
  • Maximum Rds On @ Id,Vgs: 2.5 mOhm @ 27A, 10V
  • Operating Temperature Range: -40°C to 150°C (TJ)
  • Ideal for: Use in power management
  • Popularity Rating: Medium
  • Status: Active
  • Supply and Demand: Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4851 $58.2120
290+ $0.3985 $115.5650
450+ $0.3858 $173.6100
620+ $0.3731 $231.3220
800+ $0.3615 $289.2000
1,075+ $0.3234 $347.6550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,800 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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