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IRF8788PBF

Part No IRF8788PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 24A 8-SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 24A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 100μA
Max Gate Charge 66nC @ 4.5V
Max Input Capacitance 5720pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 2.8 mOhm @ 24A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 60149-IRF8788PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF8788PBF CAD Model

Description

The Infineon Technologies 60149-IRF8788PBF is a MOSFET product in the Discrete Semiconductor Products category.

  • Usage: Common-used part
  • Popularity: High
  • Supply and Demand: Balanced
  • Maximum Power Dissipation: 2.5W
  • Drain-Source Breakdown Voltage: 30V

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4335 $52.0200
250+ $0.4056 $101.4000
385+ $0.3916 $150.7660
555+ $0.3636 $201.7980
720+ $0.3496 $251.7120
895+ $0.3357 $300.4515
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 91,660 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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