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IRF8788TRPBF

Part No IRF8788TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 24A 8-SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 24A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 100μA
Max Gate Charge 66nC @ 4.5V
Max Input Capacitance 5720pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 2.8 mOhm @ 24A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 017553-IRF8788TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF8788TRPBF CAD Model

Description

The Infineon Technologies IRF8788TRPBF is a N-channel MOSFET transistor with a drain-source breakdown voltage of 30V and a continuous drain current of 24A (Ta).

  • Maximum On-Resistance: 2.8 mOhm @ 24A, 10V
  • Gate-Source Threshold Voltage: 2.35V @ 100μA
  • Case/Package: 8-SO

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6425 $51.4000
190+ $0.5272 $100.1680
295+ $0.5107 $150.6565
405+ $0.4942 $200.1510
525+ $0.4778 $250.8450
705+ $0.4284 $302.0220
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 150,000 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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