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Same model may have multiple batches, images only for reference.
IRF8910PBF Real Image
Same model may have multiple batches, images only for reference.

IRF8910PBF

Part No IRF8910PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 10A 8-SOIC
Datasheet
IRF8910PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 10A
Maximum Rds On at Id,Vgs 13.4 mOhm @ 10A, 10V
Gate-Source Threshold Voltage 2.55V @ 250μA
Max Gate Charge 11nC @ 4.5V
Max Input Capacitance 960pF @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 017554-IRF8910PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF8910PBF CAD Model

Description

The Infineon Technologies IRF8910PBF is a high-performance 2 N-Channel (Dual) FET with a logic level gate.

  • Supply and Demand: Limited
  • Maximum Power Dissipation: 2W
  • Temperature Range: -55°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 10A

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7276 $50.9320
170+ $0.5971 $101.5070
260+ $0.5784 $150.3840
360+ $0.5597 $201.4920
465+ $0.5411 $251.6115
620+ $0.4851 $300.7620
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,610 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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