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IRLU7833PBF

Part No IRLU7833PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 140A I-PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 250μA
Max Gate Charge 50nC @ 4.5V
Max Input Capacitance 4010pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 4.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1047686-IRLU7833PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLU7833PBF CAD Model

Description

The Infineon Technologies IRLU7833PBF is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Breakdown Voltage: 30V
  • Continuous Drain Current: 140A @ 25°C
  • Power Dissipation: 140W (Tc)
  • Gate-Source Threshold Voltage: 2.3V @ 250μA
  • Maximum Rds On @ Id, Vgs: 4.5 mOhm @ 15A, 10V
  • Package: I-Pak
  • Temperature Range: -55°C to 175°C (TJ)

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