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Same model may have multiple batches, images only for reference.
IRF8915PBFCT Real Image
Same model may have multiple batches, images only for reference.

IRF8915PBFCT

Part No IRF8915PBFCT
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 8.9A 8-SOIC
Datasheet
IRF8915PBFCT Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 8.9A
Maximum Rds On at Id,Vgs 18.3 mOhm @ 8.9A, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 7.4nC @ 4.5V
Max Input Capacitance 540pF @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 069428-IRF8915PBFCT
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF8915PBFCT CAD Model

Description

The Infineon Technologies IRF8915PBFCT is a dual N-channel FET with a logic level gate.

  • Maximum Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 8.9A
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Rds on at Id,Vgs: 18.3 mOhm @ 8.9A, 10V
  • Case/Package: 8-SO

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