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Same model may have multiple batches, images only for reference.
SI4642DY-T1-E3 Vishay
Same model may have multiple batches, images only for reference.

SI4642DY-T1-E3

Part No SI4642DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 34A 8-SOIC
Datasheet
SI4642DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 1mA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 5540pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.5W (Ta), 7.8W (Tc)
Maximum Rds On at Id,Vgs 3.75 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 115356-SI4642DY-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4642DY-T1-E3 CAD Model

Description

The Vishay SI4642DY-T1-E3 MOSFET is a high-quality product that is designed for use in a wide range of applications.

  • Maximum power dissipation: 3.5W (Ta), 7.8W (Tc)
  • Polarity: N-channel
  • Popularity rating: Medium
  • Supply and demand status: Balanced
  • Package: 8-SO

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8269 $53.7485
150+ $0.6785 $101.7750
230+ $0.6573 $151.1790
315+ $0.6361 $200.3715
410+ $0.6149 $252.1090
545+ $0.5513 $300.4585
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,167 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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