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Same model may have multiple batches, images only for reference.
IRF9240
Same model may have multiple batches, images only for reference.

IRF9240

Part No IRF9240
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description HEXFET POWER MOSFET / P-Channel 200 V 11A (Tc) 125W (Tc) Through Hole TO-204AA (TO-3)
Sample
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Bulk
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 580mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 25 V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-204AA (TO-3)
Package / Case TO-204AA, TO-3
ECCN EAR99
HTSUS 8542.39.0001
Standard Package 54 pcs
Win Source Part Number 1382327-IRF9240
Ultra Librarian 3D Model Ultra Librarian IRF9240 CAD Model

Description

The 1382327-IRF9240 is a single P-Channel MOSFET transistor from the HEXFET™ series. It is designed for general-purpose applications manufactured by Infineon Technologies.

  • Drain-to-Source Voltage (Vdss): 200 V
  • Continuous Drain Current (Id) @ 25°C: 11A
  • On-Resistance (Rds On): 580mOhm @ 11A and 10V
  • Gate Threshold Voltage (Vgs(th)): 4V @ 250µA
  • Package: TO-204AA, TO-3
  • Mounting: Through-Hole
  • Gate Charge (Qg): 60nC @ 10V
  • Input Capacitance (Ciss): 1200pF @ 25V
  • Operating Temperature: -55°C to 150°C

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