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Same model may have multiple batches, images only for reference.
IRF9332TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF9332TRPBF

Part No IRF9332TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 9.8A 8SOIC
Datasheet
IRF9332TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.4V @ 25μA
Max Gate Charge 41nC @ 10V
Max Input Capacitance 1270pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 17.5 mOhm @ 9.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1046770-IRF9332TRPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF9332TRPBF CAD Model

Description

The Infineon Technologies IRF9332TRPBF is a P-channel MOSFET designed for use in discrete semiconductor products.

  • Mounting: SMD (SMT) technology
  • Package: 8-SO
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 9.8A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 2.4V @ 25μA
  • Maximum Gate Charge: 41nC @ 10V
  • Maximum Input Capacitance: 1270pF @ 25V
  • Maximum Rds On: 17.5 mOhm @ 9.8A, 10V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Availability: actively available
  • Alternative Parts: FDS4435A, TSM180P03CS RLG, and IRF9332PbF

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $25.0249 $75.0747
6+ $20.5334 $123.2004
9+ $19.8916 $179.0244
12+ $19.2501 $231.0012
16+ $18.6084 $297.7344
21+ $16.6833 $350.3493
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