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IRF9333PBF

Name: IRF9333PBF
Brand: Infineon Technologies
SKU: 1028139
Availability: InStock
Rating: 4.85 (48 reviews)

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	IRF9333PBF
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET P-CH 30V 9.2A 8SO / P-Channel 30 V 9.2A (Ta) 2.5W (Ta) Surface Mount 8-SO
Datasheet	IRF9333PBF Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Infineon Technologies
Series	HEXFET®
Package	Tube
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	9.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	19.4mOhm @ 9.2A, 10V
Vgs(th) (Max) @ Id	2.4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1110 pF @ 25 V
Power Dissipation (Max)	2.5W (Ta)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting	SMD (SMT)
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	SP001554504
Standard Package	3,800
Win Source Part Number	1028139-IRF9333PBF
Ultra Librarian 3D Model	Ultra Librarian IRF9333PBF CAD Model

Alternative Products

Description

The Infineon Technologies 1028139-IRF9333PBF is a P-Channel MOSFET transistor with a HEXFET® series.

Manufacturer: Infineon Technologies
Product Name: 1028139-IRF9333PBF
Type: P-Channel MOSFET transistor
Series: HEXFET®
Drain to Source Voltage (Vdss): 30 V
Continuous Drain Current (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 19.4mOhm @ 9.2A, 10V
Gate Charge (Qg) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) @ Vds: 1110 pF @ 25 V
Package: 8-SOIC
Applications: power management systems, motor control, and DC-DC converters.

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IRF9333PBF

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