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Same model may have multiple batches, images only for reference.
IRF9392PBF Real Image
Same model may have multiple batches, images only for reference.

IRF9392PBF

Part No IRF9392PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 9.8A 8SOIC
Datasheet
IRF9392PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V, 20V
Gate-Source Threshold Voltage 2.4V @ 25μA
Max Gate Charge 14nC @ 4.5V
Max Input Capacitance 1270pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 12.1 mOhm @ 7.8A, 20V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1046774-IRF9392PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF9392PBF CAD Model

Description

The Infineon Technologies IRF9392PBF is a MOSFET technology electronic component that is designed for use in discrete semiconductor products.

  • Polarity: P-channel
  • Power Dissipation: 2.5W (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 9.8A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 2.4V @ 25μA
  • Gate Charge: 14nC @ 4.5V
  • Input Capacitance: 1270pF @ 25V
  • Rds On: 12.1 mOhm @ 7.8A, 20V
  • Package: 8-SO
  • Dimension: 8-SOIC (0.154", 3.90mm Width)
  • Mounting: Surface
  • Drive Voltage: 10V, 20V
  • Status: Active
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: Balanced

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