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Same model may have multiple batches, images only for reference.
IRF9410PBF Real Image
Same model may have multiple batches, images only for reference.

IRF9410PBF

Part No IRF9410PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 30V 7A 8-Pin SOIC Tube / MOSFET N-CH 30V 7A 8-SOIC
Datasheet
IRF9410PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 550pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 30 mOhm @ 7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 017558-IRF9410PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRF9410
Introduction Date September 21, 2004
ECCN EAR99
Country of Origin China, Thailand
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRF9410PBF CAD Model

Description

The Infineon Technologies IRF9410PBF is an N-Channel MOSFET transistor.

  • Maximum Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 7A (Ta)
  • On-Resistance: 30 mOhm @ 7A and 10V gate-source voltage
  • Maximum Power Dissipation: 2.5W (Ta)
  • Package: 8-SO
  • Status: Obsolete part

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.7357 $58.8560
195+ $0.6036 $117.7020
300+ $0.5848 $175.4400
410+ $0.5660 $232.0600
530+ $0.5470 $289.9100
710+ $0.4904 $348.1840
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Availability: 30,805 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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