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Same model may have multiple batches, images only for reference.
IRF9520NS Real Image
Same model may have multiple batches, images only for reference.

IRF9520NS

Part No IRF9520NS
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 6.8A D2PAK
Datasheet
IRF9520NS Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 350pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 48W (Tc)
Maximum Rds On at Id,Vgs 480 mOhm @ 4A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046777-IRF9520NS
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IRF9520NS CAD Model

Description

The IRF9520NS is a P-Channel MOSFET transistor from Infineon Technologies.

  • Win-Source Part Number: 1046777
  • Category: Discrete Semiconductor Products
  • Package: D2PAK
  • Status: obsolete (EOL)
  • Power Dissipation (max): 3.8W (Ta), 48W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Maximum Rds On: 480 mOhm @ 4A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Input Capacitance (max): 350pF @ 25V

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