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IRF9530NPBF Infineon Technologies IRF9530NPBF Real Image IRF9530NPBF real image310
Same model may have multiple batches, images only for reference.
IRF9530NPBF Infineon Technologies IRF9530NPBF Real Image IRF9530NPBF real image310
IRF9530NPBF Infineon Technologies IRF9530NPBF Real Image IRF9530NPBF real image310
Same model may have multiple batches, images only for reference.

IRF9530NPBF

Part No IRF9530NPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 14A TO-220AB / Trans MOSFET P-CH 100V 14A 3-Pin(3+Tab) TO-220AB Tube
Datasheet
IRF9530NPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 58nC @ 10V
Max Input Capacitance 760pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 79W (Tc)
Maximum Rds On at Id,Vgs 200 mOhm @ 8.4A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 069431-IRF9530NPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name IRF9530
Introduction Date February 04, 2004
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRF9530NPBF CAD Model

Description

The Infineon Technologies IRF9530NPBF is a P-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 14A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 58nC @ 10V
  • Maximum Input Capacitance: 760pF @ 25V
  • Maximum Rds On @ Id,Vgs: 200 mOhm @ 8.4A, 10V
  • Package: TO-220AB
  • Mounting: through hole
  • Technology: MOSFET
  • Polarity: P-channel
  • Power Dissipation: 79W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Popularity: high
  • Supply and Demand Status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
265+ $0.1901 $50.3765
565+ $0.1781 $100.6265
875+ $0.1721 $150.5875
1,250+ $0.1600 $200.0000
1,625+ $0.1540 $250.2500
2,030+ $0.1480 $300.4400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 170,810 pieces
MOQ: 265 pcs
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