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Same model may have multiple batches, images only for reference.
IRF9953PBF Real Image
Same model may have multiple batches, images only for reference.

IRF9953PBF

Part No IRF9953PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 30V 2.3A 8-SOIC
Datasheet
IRF9953PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
FET Type 2 P-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.3A
Maximum Rds On at Id,Vgs 250 mOhm @ 1A, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 190pF @ 15V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1046790-IRF9953PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF9953PBF CAD Model

Description

The Infineon Technologies IRF9953PBF is a 2 P-channel (Dual) FET transistor designed for use in discrete semiconductor products.

  • Manufacturer: Infineon Technologies
  • Type: 2 P-channel (Dual) FET
  • Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 2.3A
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 12nC @ 10V
  • Maximum Input Capacitance: 190pF @ 15V
  • Package: 8-SO
  • Mounting: SMD (SMT)
  • Popularity: Medium
  • Supply and Demand Status: Balance

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