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Same model may have multiple batches, images only for reference.
IRF9Z34NL Real Image
Same model may have multiple batches, images only for reference.

IRF9Z34NL

Part No IRF9Z34NL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 55V 19A TO-262 / Trans MOSFET P-CH Si 55V 19A 3-Pin(3+Tab) TO-262 Tube
Datasheet
IRF9Z34NL Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series HEXFET
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type P
Technology MOSFET
Drain Source Voltage 55V
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 35nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 620pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 3.8W (Ta), 68W (Tc)
Rds On (Maximum) @ Id, Vgs 100 mOhm @ 10A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-262
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 777041-IRF9Z34NL
Popularity Medium
Supply and Demand Status Limited
Family Name IRF9Z34NL
Introduction Date August 25, 1997
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRF9Z34NL CAD Model

Description

The Infineon Technologies HEXFET IRF9Z34NL is a P-Channel MOSFET.

  • Drain-Source Voltage: 55V
  • Continuous Drain Current (Id): 19A @ 25°C
  • Maximum On-Resistance (Rds On): 100mOhm @ 10A @ 10V
  • Gate Charge (Qg): 35nC @ 10V
  • Input Capacitance (Ciss): 620pF @ 25V
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA

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