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Same model may have multiple batches, images only for reference.
IRFB3207PBF Real Image
Same model may have multiple batches, images only for reference.

IRFB3207PBF

Part No IRFB3207PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 180A TO-220AB
Datasheet
IRFB3207PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 260nC @ 10V
Max Input Capacitance 7600pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 330W (Tc)
Maximum Rds On at Id,Vgs 4.5 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 090154-IRFB3207PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFB3207PBF CAD Model

Description

The Infineon Technologies IRFB3207PBF MOSFET is a N-Channel FET that features a drain-source breakdown voltage of 75V and a continuous drain current of 170A (Tc).

  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 170A (Tc)
  • Maximum Rds on: 4.5 mOhm @ 75A, 10V
  • Gate Charge (Qg): 260nC @ 10V
  • Package / Case: TO-220AB
  • Dimension: TO-220-3
  • Temperature Range: -55°C to 175°C (TJ)
  • Suitable for: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8254 $53.6510
130+ $0.7732 $100.5160
205+ $0.7471 $153.1555
290+ $0.6948 $201.4920
375+ $0.6687 $250.7625
470+ $0.6426 $302.0220
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Availability: 40,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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