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Same model may have multiple batches, images only for reference.
IRFB3307PBF Real Image
Same model may have multiple batches, images only for reference.

IRFB3307PBF

Part No IRFB3307PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 130A TO-220AB
Datasheet
IRFB3307PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 150μA
Max Gate Charge 180nC @ 10V
Max Input Capacitance 5150pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 6.3 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 069448-IRFB3307PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFB3307PBF CAD Model

Description

The Infineon Technologies IRFB3307PBF is a N-channel MOSFET transistor that is widely used in various electronic applications.

  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 130A @ 25°C
  • Maximum Rds on @ Id,Vgs: 6.3 mOhm @ 75A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 4V @ 150μA
  • Maximum Power Dissipation: 200W (Tc)
  • Package: TO-220AB package
  • Suitable for: Discrete semiconductor products

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235+ $0.4261 $100.1335
365+ $0.4127 $150.6355
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650+ $0.3861 $250.9650
870+ $0.3462 $301.1940
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