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IRFB38N20DPBF

Part No IRFB38N20DPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 43A TO-220AB / Trans MOSFET N-CH 200V 43A 3-Pin(3+Tab) TO-220AB Tube
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 91nC @ 10V
Max Input Capacitance 2900pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 300W (Tc)
Maximum Rds On at Id,Vgs 54 mOhm @ 26A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 069451-IRFB38N20DPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRFB38N20
Introduction Date August 11, 2004
ECCN EAR99
Country of Origin China, Mexico
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRFB38N20DPBF CAD Model

Description

The Infineon Technologies IRFB38N20DPBF is an N-Channel MOSFET transistor with a drain-source breakdown voltage of 200V and a continuous drain current of 43A at 25°C.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 43A @ 25°C
  • Power Dissipation: 3.8W (Ta) and 300W (Tc)
  • Package: TO-220AB
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 54 mOhm @ 26A, 10V
  • Drive Voltage: Maximum of 10V
  • Status: Active production

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.7980 $51.8700
155+ $0.6548 $101.4940
240+ $0.6343 $152.2320
330+ $0.6138 $202.5540
425+ $0.5934 $252.1950
565+ $0.5320 $300.5800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,931 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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