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IRFB4019PBF

Part No IRFB4019PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 17A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.9V @ 50μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 800pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 80W (Tc)
Maximum Rds On at Id,Vgs 95 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 083914-IRFB4019PBF
Family Name IRFB4019
Introduction Date March 03, 2006
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFB4019PBF CAD Model

Description

The Infineon Technologies IRFB4019PBF is a N-Channel MOSFET with a drain-source breakdown voltage of 150V and a continuous drain current of 17A at 25°C.

  • Maximum Power Dissipation: 80W (Tc)
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 4.9V @ 50μA
  • Maximum Gate Charge: 20nC @ 10V
  • Maximum Rds On at Id,Vgs: 95 mOhm @ 10A, 10V
  • Package: TO-220AB
  • Temperature Range: -55°C to 175°C (TJ)
  • Halogen-Free Compliant: Yes

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8970 $53.8200
140+ $0.7360 $103.0400
215+ $0.7130 $153.2950
290+ $0.6900 $200.1000
375+ $0.6670 $250.1250
505+ $0.5980 $301.9900
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,280 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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