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IRFB4020PBF

Part No IRFB4020PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 18A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.9V @ 100μA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 1200pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 100W (Tc)
Maximum Rds On at Id,Vgs 100 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 069452-IRFB4020PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFB4020PBF CAD Model

Description

The Infineon Technologies IRFB4020PBF is an N-Channel MOSFET designed for use in a variety of applications.

  • Maximum Continuous Drain Current: 18A
  • Mounting: Through-Hole
  • Package: TO-220AB
  • On-Resistance: 100mΩ
  • Maximum Power Dissipation: 100W
  • Operating Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7064 $52.9800
175+ $0.5796 $101.4300
270+ $0.5615 $151.6050
370+ $0.5434 $201.0580
480+ $0.5253 $252.1440
640+ $0.4709 $301.3760
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,265 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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