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Same model may have multiple batches, images only for reference.
IRFB4212PBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRFB4212PBF

Part No IRFB4212PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 18A TO-220AB
Datasheet
IRFB4212PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 23nC @ 10V
Max Input Capacitance 550pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 60W (Tc)
Maximum Rds On at Id,Vgs 72.5 mOhm @ 13A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 069454-IRFB4212PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFB4212PBF CAD Model

Description

The Infineon Technologies IRFB4212PBF is a N-Channel MOSFET transistor that is designed for high voltage, high speed switching applications.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 18A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 23nC @ 10V
  • Package: TO-220AB
  • Mounting: Through Hole
  • Power Dissipation: 60W (Tc)
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Category: Discrete Semiconductor Products
  • Status: Obsolete (EOL)

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110+ $0.9482 $104.3020
165+ $0.9186 $151.5690
225+ $0.8889 $200.0025
295+ $0.8593 $253.4935
390+ $0.7704 $300.4560
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