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IRFB4410ZPBF Real Image1 IRFB4410ZPBF Real Image2 IRFB4410ZPBF label picture IRFB4410ZPBF real image
Same model may have multiple batches, images only for reference.
IRFB4410ZPBF Real Image1 IRFB4410ZPBF Real Image2 IRFB4410ZPBF label picture IRFB4410ZPBF real image
IRFB4410ZPBF Real Image1 IRFB4410ZPBF Real Image2 IRFB4410ZPBF label picture IRFB4410ZPBF real image
Same model may have multiple batches, images only for reference.

IRFB4410ZPBF

Part No IRFB4410ZPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 97A TO-220AB / Trans MOSFET N-CH Si 100V 97A 3-Pin(3+Tab) TO-220AB Tube
Datasheet
IRFB4410ZPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 97A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 150μA
Max Gate Charge 120nC @ 10V
Max Input Capacitance 4820pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 230W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 58A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 015886-IRFB4410ZPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name IRFB4410Z
Introduction Date March 06, 2007
ECCN EAR99
Country of Origin China, Republic of Korea
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRFB4410ZPBF CAD Model

Description

The Infineon Technologies IRFB4410ZPBF is a N-channel MOSFET with a drain-source breakdown voltage of 100V and a maximum continuous drain current of 97A (Tc).

  • Drain-Source Breakdown Voltage: 100V
  • Maximum Continuous Drain Current: 97A (Tc)
  • Power Dissipation: 230W (Tc)
  • Maximum Rds On: 9 mOhm @ 58A, 10V
  • Gate-Source Threshold Voltage: 4V @ 150μA
  • Maximum Gate Charge: 120nC @ 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 4820pF @ 50V
  • Application: Discrete semiconductor products
  • Popularity: High
  • Alternative Parts: BUK7510-100B, FDP090N10, SQP120N10-09_GE3, and MDP1922TH

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