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IRFB52N15DPBF

Part No IRFB52N15DPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 51A TO-220AB / Trans MOSFET N-CH 150V 51A 3-Pin(3+Tab) TO-220AB Tube
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 89nC @ 10V
Max Input Capacitance 2770pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.8W (Ta), 230W (Tc)
Maximum Rds On at Id,Vgs 32 mOhm @ 36A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 083701-IRFB52N15DPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRFB52N15
Introduction Date November 07, 2003
ECCN EAR99
Country of Origin China, Mexico, Republic of Korea
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRFB52N15DPBF CAD Model

Description

The Infineon Technologies IRFB52N15DPBF is a N-Channel MOSFET with a maximum power dissipation of 3.8W (Ta) and 230W (Tc).

  • Maximum Power Dissipation: 3.8W (Ta), 230W (Tc)
  • Mounting Type: Through Hole
  • Package: TO-220AB
  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 51A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 89nC @ 10V
  • Maximum Rds On at Id,Vgs: 32 mOhm @ 36A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3435 $53.7400
95+ $1.1024 $104.7280
145+ $1.0679 $154.8455
195+ $1.0335 $201.5325
255+ $0.9990 $254.7450
335+ $0.8957 $300.0595
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,753 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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