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Same model may have multiple batches, images only for reference.
SIJ482DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIJ482DP-T1-GE3

Part No SIJ482DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 60A PPAK SO-8  /  N-Channel 80 V 60A (Tc) 5W (Ta), 69.4W (Tc) Surface Mount PowerPAK® SO-8
Datasheet
SIJ482DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR),Cut Tape (CT)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2425 pF @ 40 V
Power Dissipation (Max) 5W (Ta), 69.4W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIJ482
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SIJ482DP-T1-GE3DKR,SIJ482DP-T1-GE3DKRINACTIVE,SIJ482DP-T1-GE3TR,SIJ482DP-T1-GE3CT,SIJ482DP-T1-GE3DKR-ND,SIJ482DPT1GE3
Standard Package 3,000
Win Source Part Number 1201493-SIJ482DP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIJ482DP-T1-GE3 CAD Model

Description

The Vishay Siliconix electronic component with Win Source Part Number 1201493-SIJ482DP-T1-GE3 is a highly efficient MOSFET transistor suitable for various electronic applications.

  • FET Type: N-Channel
  • Maximum Drain-Source Voltage: 80V
  • Maximum Power Dissipation: 5W (Ta), 69.4W (Tc)
  • Package: PowerPAK SO-8

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