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Same model may have multiple batches, images only for reference.
IRFB7734PBF Real Image
Same model may have multiple batches, images only for reference.

IRFB7734PBF

Part No IRFB7734PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 183A TO220
Datasheet
IRFB7734PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 183A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.7V @ 250μA
Max Gate Charge 270nC @ 10V
Max Input Capacitance 10150pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 290W (Tc)
Maximum Rds On at Id,Vgs 3.5 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1046828-IRFB7734PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFB7734PBF CAD Model

Description

The Infineon Technologies IRFB7734PBF is a MOSFET transistor with a N-Channel polarity.

  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 183A (Tc) @ 25°C
  • Power Dissipation (Max): 290W (Tc)
  • Gate-Source Threshold Voltage: 3.7V @ 250μA
  • Max Gate Charge: 270nC @ 10V
  • Max Input Capacitance: 10150pF @ 25V
  • Package: TO-220AB
  • Application: Discrete Semiconductor Products
  • Temperature Range - Operating: -55°C to 175°C (TJ)
  • Maximum Rds On @ Id,Vgs: 3.5 mOhm @ 100A, 10V
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.4652 $51.1720
230+ $0.4358 $100.2340
360+ $0.4210 $151.5600
515+ $0.3916 $201.6740
665+ $0.3769 $250.6385
830+ $0.3622 $300.6260
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Availability: 162,000 pieces
MOQ: 110 pcs
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