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IRFC9140CDV

Part No IRFC9140CDV
Manufacturer Infineon Technologies
Catalog OEM Parts (F - I)
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

RoHS Non-Compliant
Win Source Part Number 991290-IRFC9140CDV
Categories OEM Parts(F-I)
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IRFC9140CDV CAD Model

Description

The IRFC9140CDV is a 200V P-Channel HEXFET® Power MOSFET from Infineon Technologies. This MOSFET is designed for high-efficiency power switching applications, offering fast switching speeds and robust performance. It is particularly well-suited for use in applications where efficient power management and minimal heat dissipation are crucial.

Applications:

  • High-frequency DC-DC converters
  • Power management in server and telecom systems
  • Motor control applications
  • Uninterruptible Power Supplies (UPS)
  • Synchronous rectification

Features:

  • P-Channel MOSFET
  • Voltage Rating: 200V
  • Low on-resistance (RDS(on)) for reduced power loss
  • Fast switching speed
  • Avalanche rated
  • Logic-level drive
  • RoHS compliant

Benefits:

  • Improved energy efficiency due to low RDS(on), minimizing power dissipation and heat generation.
  • Increased system reliability with its avalanche rating, providing protection against voltage spikes.
  • Simplified gate drive requirements with its logic-level drive capability, allowing direct interface with microcontrollers.
  • Enhanced thermal performance, contributing to cooler operation and extended component lifespan.
  • Suitable for high-frequency applications due to its fast switching speed, reducing switching losses.

Additional Details:

The IRFC9140CDV features a low gate charge, which contributes to faster switching speeds and reduced switching losses. Its robust design ensures reliable operation in demanding environments. The MOSFET is available in a surface-mount package, making it suitable for automated assembly processes. Its avalanche capability ensures that the MOSFET can withstand transient voltage spikes without damage, enhancing overall system reliability. The device's low on-resistance minimizes conduction losses, leading to improved energy efficiency and reduced heat generation. Infineon's HEXFET® technology ensures superior performance and reliability compared to conventional MOSFETs. This device is commonly used in applications requiring high power density and efficiency, such as power supplies for servers and telecom equipment.

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