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Same model may have multiple batches, images only for reference.
IRFF310
Same model may have multiple batches, images only for reference.

IRFF310

Part No IRFF310
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-39
Continuous Drain Current (ID) 1.25 A
Drain to Source Breakdown Voltage 400 V
Drain to Source Resistance 3.6 Ω
Drain to Source Voltage (Vdss) 400 V
Gate to Source Voltage (Vgs) 20 V
Lead Free Contains Lead
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Through Hole
Number of Elements 1
Number of Pins 3
On-State Resistance 30.6 Ω
Power Dissipation 15 W
Radiation Hardening No
RoHS Non-Compliant
Win Source Part Number 1000331-IRFF310
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IRFF310 CAD Model

Description

The Infineon Technologies IRFF310 is a transistor - fet, MOSFET - RF product with a low popularity.

  • Supply and Demand Status: Shortage
  • Mounting: Through Hole
  • Case / Package: TO-39
  • RoHS: Non-Compliant (Lead)
  • Maximum Operating Temperature: 150 °C
  • Minimum Operating Temperature: -55 °C
  • Continuous Drain Current: 1.25 A
  • Drain to Source Breakdown Voltage: 400 V
  • Drain to Source Resistance: 3.6 Ω
  • Gate to Source Voltage: 20 V
  • On-State Resistance: 30.6 Ω
  • Alternative Parts: 2N6786, JANTX2N6786, IRFF420, 2N6794, IRFF110, and 2N6782

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