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IRFH5010TR2PBF

Part No IRFH5010TR2PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 13A 5X6 PQFN  /  N-Channel 100 V 13A (Ta), 100A (Tc) Surface Mount 8-PQFN (5x6)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Package Cut Tape (CT),
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs 9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 4340 pF @ 25 V
Mounting SMD (SMT)
Supplier Device Package 8-PQFN (5x6)
Package / Case 8-PowerVDFN
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names IRFH5010TR2PBFDKR,IRFH5010TR2PBFCT,IRFH5010TR2PBFTR,SP001570754
Standard Package 400
Win Source Part Number 1065537-IRFH5010TR2PBF
Ultra Librarian 3D Model Ultra Librarian IRFH5010TR2PBF CAD Model

Description

The IRFH5010TR2PBF MOSFET is a N-Channel FET type electronic component designed for use in discrete semiconductor products.

  • FET Type: N-Channel
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id): 13A (Ta), 100A (Tc)
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
  • Packaging: 8-PowerVDFN
  • Supplier Device Package: 8-PQFN (5x6)

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $4.2305 $59.2270
34+ $3.4712 $118.0208
52+ $3.3627 $174.8604
71+ $3.2543 $231.0553
92+ $3.1458 $289.4136
123+ $2.8203 $346.8969
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,270 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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