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IRFH5255TRPBF

Part No IRFH5255TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 15A 8VQFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 15A (Ta), 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 25μA
Max Gate Charge 14.5nC @ 10V
Max Input Capacitance 988pF @ 13V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.6W (Ta), 26W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (5x6) Single Die
Dimension 8-VQFN
Win Source Part Number 205358-IRFH5255TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFH5255TRPBF CAD Model

Description

The Infineon Technologies IRFH5255TRPBF MOSFET is a high-performance N-channel transistor that is ideal for use in a wide range of electronic applications.

  • Maximum Power Dissipation: 3.6W (Ta), 26W (Tc)
  • Drain-Source Breakdown Voltage: 25V
  • Maximum Continuous Drain Current: 15A (Ta), 51A (Tc)
  • Gate-Source Threshold Voltage: 2.35V @ 25μA
  • Maximum Gate Charge: 14.5nC @ 10V
  • Package: PQFN (5x6) Single Die
  • Maximum Input Capacitance: 988pF @ 13V
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9794 $58.7640
145+ $0.8039 $116.5655
225+ $0.7785 $175.1625
310+ $0.7542 $233.8020
400+ $0.7288 $291.5200
535+ $0.6537 $349.7295
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 78,900 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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