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Same model may have multiple batches, images only for reference.
IRFH5301TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFH5301TRPBF

Part No IRFH5301TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 35A 5X6 PQFN
Datasheet
IRFH5301TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 35A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 100μA
Max Gate Charge 77nC @ 10V
Max Input Capacitance 5114pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.6W (Ta), 110W (Tc)
Maximum Rds On at Id,Vgs 1.85 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (5x6) Single Die
Dimension 8-PowerVDFN
Win Source Part Number 084007-IRFH5301TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFH5301TRPBF CAD Model

Description

The Infineon Technologies 084007-IRFH5301TRPBF is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 35A @ 25°C
  • Gate-Source Threshold Voltage: 2.35V @ 100μA
  • Maximum Gate Charge: 77nC @ 10V
  • Maximum Input Capacitance: 5114pF @ 15V
  • Maximum Rds On at Id,Vgs: 1.85 mOhm @ 50A, 10V
  • Status: Active
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: PQFN (5x6) Single Die
  • Popularity: High

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Quantity Unit Price Ext. Price
80+ $0.6288 $50.3040
195+ $0.5160 $100.6200
305+ $0.4998 $152.4390
415+ $0.4837 $200.7355
535+ $0.4676 $250.1660
720+ $0.4192 $301.8240
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