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Same model may have multiple batches, images only for reference.
IRFH5302DTR2PBF Real Image
Same model may have multiple batches, images only for reference.

IRFH5302DTR2PBF

Part No IRFH5302DTR2PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 29A 8VQFN
Datasheet
IRFH5302DTR2PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 29A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 100μA
Max Gate Charge 55nC @ 10V
Max Input Capacitance 3635pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.6W (Ta), 104W (Tc)
Maximum Rds On at Id,Vgs 2.5 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (5x6) Single Die
Dimension 8-PowerVDFN
Win Source Part Number 1046878-IRFH5302DTR2PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFH5302DTR2PBF CAD Model

Description

The Infineon Technologies IRFH5302DTR2PBF MOSFET is an N-channel power MOSFET designed for use in discrete semiconductor products.

  • Power Dissipation (Ta): 3.6W
  • Power Dissipation (Tc): 104W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current (Ta) @ 25°C: 29A
  • Continuous Drain Current (Tc) @ 25°C: 100A
  • Gate-Source Threshold Voltage @ 100μA: 2.35V
  • Maximum Gate Charge @ 10V: 55nC
  • Maximum Input Capacitance @ 25V: 3635pF
  • Maximum Rds On @ Id,Vgs: 2.5 mOhm @ 50A, 10V
  • Package: PQFN (5x6) Single Die
  • Mounting Type: SMD (SMT)
  • Status: Obsolete (EOL)

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184+ $1.8884 $347.4656
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