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IRFH5302TR2PBF

Part No IRFH5302TR2PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 32A 5X6 PQFN  /  N-Channel 30 V 32A (Ta), 100A (Tc) Surface Mount PQFN (5x6) Single Die
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Package Cut Tape (CT),
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 32A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs 2.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 4400 pF @ 15 V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PQFN (5x6) Single Die
Package / Case 8-PowerVDFN
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001554780,IRFH5302TR2PBFTR,IRFH5302TR2PBFDKR,IRFH5302TR2PBFCT
Standard Package 400
Win Source Part Number 1065546-IRFH5302TR2PBF
Ultra Librarian 3D Model Ultra Librarian IRFH5302TR2PBF CAD Model

Description

The Infineon Technologies IRFH5302TR2PBF is an N-channel MOSFET device with a maximum drain to source voltage of 30V.

  • Package: PQFN (5x6) Single Die
  • Mounting: Surface-mount device
  • Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 15 V
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6722 $60.4980
210+ $0.5521 $115.9410
325+ $0.5348 $173.8100
450+ $0.5174 $232.8300
580+ $0.5001 $290.0580
775+ $0.4481 $347.2775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,990 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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