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Same model may have multiple batches, images only for reference.
IRFH7914TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFH7914TRPBF

Part No IRFH7914TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 15A PQFN
Datasheet
IRFH7914TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 15A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 25μA
Max Gate Charge 12nC @ 4.5V
Max Input Capacitance 1160pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta)
Maximum Rds On at Id,Vgs 8.7 mOhm @ 14A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (5x6)
Dimension 8-PowerVDFN
Win Source Part Number 017599-IRFH7914TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFH7914TRPBF CAD Model

Description

The Infineon Technologies 017599-IRFH7914TRPBF is a high-performance N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 15A @ 25°C (Ta) or 35A @ Tc
  • Maximum Rds On: 8.7 mOhm @ 14A and 10V
  • Gate-Source Threshold Voltage: 2.35V @ 25μA
  • Maximum Gate Charge: 12nC @ 4.5V
  • Package: PQFN (5x6)
  • Mounting: SMD (SMT) technology
  • Supply and Demand Status: Sufficient

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