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IRFI4020H-117P Infineon Technologies IRFI4020H-117P Real Image IRFI4020H-117P label picture 2 IRFI4020H-117P real image
Same model may have multiple batches, images only for reference.
IRFI4020H-117P Infineon Technologies IRFI4020H-117P Real Image IRFI4020H-117P label picture 2 IRFI4020H-117P real image
IRFI4020H-117P Infineon Technologies IRFI4020H-117P Real Image IRFI4020H-117P label picture 2 IRFI4020H-117P real image
Same model may have multiple batches, images only for reference.

IRFI4020H-117P

Part No IRFI4020H-117P
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 200V 9.1A TO-220FP
Datasheet
IRFI4020H-117P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 9.1A
Maximum Rds On at Id,Vgs 100 mOhm @ 5.5A, 10V
Gate-Source Threshold Voltage 4.9V @ 100μA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 1240pF @ 25V
Maximum Power Dissipation 21W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-5 Full-Pak
Win Source Part Number 069483-IRFI4020H-117P
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRFI4020H
Introduction Date August 22, 2006
ECCN EAR99
Country of Origin China, Mexico
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian IRFI4020H-117P CAD Model

Description

The Infineon Technologies IRFI4020H-117P is a 2 N-Channel (Dual) MOSFET transistor with a standard FET feature.

  • Family: IRFI4020H
  • Category: Discrete Semiconductor Products
  • Mounting Type: through-hole
  • Package: TO-220-5 Full-Pak case
  • Maximum Power Dissipation: 21W
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 9.1A @ 25°C
  • Gate-Source Threshold Voltage: 4.9V @ 100μA
  • Maximum Gate Charge: 29nC @ 10V
  • Maximum Input Capacitance: 1240pF @ 25V
  • Maximum Rds On at Id,Vgs: 100 mOhm @ 5.5A, 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Compliance: compliant with halogen-free regulations
  • Market Status: balanced supply and demand in the open market
  • Estimated EOL Date: 2024

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