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IRFI530NPBF

Part No IRFI530NPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 12A TO220FP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 44nC @ 10V
Max Input Capacitance 640pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 41W (Tc)
Maximum Rds On at Id,Vgs 110 mOhm @ 6.6A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB Full-Pak
Dimension TO-220-3 Full Pack
Win Source Part Number 1046935-IRFI530NPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFI530NPBF CAD Model

Description

The Infineon Technologies 1046935-IRFI530NPBF is a MOSFET technology with N-Channel polarity.

  • Technology: MOSFET
  • Polarity: N-Channel
  • Power Dissipation (Max): 41W (Tc)
  • Mounting: Through-Hole
  • Packaging: Tube/Rail
  • Temperature Range: -55°C to 175°C (TJ)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current (Id) @ 25°C: 12A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Gate Charge (Qg) (Max): 44nC @ 10V
  • Input Capacitance (Ciss) (Max): 640pF @ 25V
  • Rds On (Max) @ Id,Vgs: 110 mOhm @ 6.6A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.4076 $63.3420
100+ $1.1550 $115.5000
155+ $1.1190 $173.4450
215+ $1.0829 $232.8235
280+ $1.0468 $293.1040
370+ $0.9385 $347.2450
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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